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| inchange semiconductor isc product specification isc silicon npn power transistor 2SC3462 description high breakdown voltage- : v (br)cbo = 1100v(min) fast switching speed wide area of safe operation applications designed for switching regulator applications absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 1100 v v ceo collector-emitter voltage 800 v v ebo emitter-base voltage 7 v i c collector current-continuous 4.5 a i cm collector current-peak 15 a i b b base current-continuous 2 a p c collector power dissipation @ t c =25 100 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SC3462 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 5ma; r be = 800 v v ceo(sus) collector-emitter sustaining voltage i c = 2a; i b1 = -i b2 = 0.4a; l= 2mh; clamped 800 v v (br)cbo collector-base breakdown voltage i c = 1ma; i e = 0 1100 v v (br)ebo emitter-base breakdown voltage i e = 1ma; i c = 0 7 v v ce( sat ) collector-emitter saturation voltage i c = 2a; i b = 0.4a b 2.0 v v be( sat ) base-emitter saturation voltage i c = 2a; i b = 0.4a b 1.5 v i cbo collector cutoff current v cb = 800v; i e =0 10 a i ebo emitter cutoff current v eb = 5v; i c =0 10 a h fe-1 dc current gain i c = 0.3a; v ce = 5v 10 40 h fe-2 dc current gain i c = 1.5a; v ce = 5v 8 c ob output capacitance i e = 0; v cb = 10v; f test =1.0mhz 90 pf f t current-gain?bandwidth product i c = 0.3a; v ce = 10v 15 mhz switching times t on turn-on time 0.5 s t stg storage time 3.0 s t f fall time i c = 3a , i b1 = 0.6a; i b2 = -1.2a r l = 133 ; v cc =400v 0.3 s ? h fe- 1 classifications k l m 10-20 15-30 20-40 isc website www.iscsemi.cn 2 |
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